Shaleev, M V: search on Z-Library

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1

Quantum dot emission driven by Mie resonances in silicon nanostructures

Rutckaia, Viktoriia, Heyroth, Frank, Novikov, Alexey, Shaleev, Mikhail, Petrov, Mihail I, Schilling, Joerg

Journal:

Year:

2017

Language:

english

File:

PDF, 19.27 MB

english, 2017

2

Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

Yurasov, D.V., Novikov, A.V., Shaleev, M.V., Baidakova, N.A., Morozova, E.E., Skorokhodov, E.V., Ota, Y., Hombe, A., Kurokawa, Y., Usami, N.

Journal:

Materials Science in Semiconductor Processing

Year:

2018

Language:

english

File:

PDF, 785 KB

english, 2018

3

Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

Ota, Yushi, Hombe, Atsushi, Nezasa, Ryota, Yurasov, Dmitry, Novikov, Alexey, Shaleev, Mikhail, Baidakova, Natalie, Morozova, Elena, Kurokawa, Yasuyoshi, Usami, Noritaka

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 2.42 MB

english, 2018

4

[IEEE 2005 2nd IEEE International Conference on Group IV Photonics - Antwerp, Belgium (21-23 Sept. 2005)] IEEE International Conference on Group IV Photonics, 2005. @nd - Photoluminescence of SiGe/Si(001) self-assembled islands grown on strained Si/sub 1-x/Ge/sub x/ layer

Lobanov, D.N., Novikov, A.V., Shaleev, M.V., Drozdov, Yu.N., Krasilnik, Z.F., Yablonskiy, A.N.

Year:

2005

Language:

english

File:

PDF, 660 KB

english, 2005

5

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

Baidus, Nikolay, Aleshkin, Vladimir, Dubinov, Alexander, Kudryavtsev, Konstantin, Nekorkin, Sergei, Novikov, Alexey, Pavlov, Dmiriy, Rykov, Artem, Sushkov, Artem, Shaleev, Mikhail, Yunin, Pavel, Yuras

Journal:

Year:

2018

Language:

english

File:

PDF, 40.93 MB

english, 2018

6

[IEEE 2014 IEEE 11th International Conference on Group IV Photonics - Paris (2014.8.27-2014.8.29)] 11th International Conference on Group IV Photonics (GFP) - Light-emitting SiGe heterostructures with self-assembled islands for optical interconnection in the wavelength range of 1.3–2.1 μm

Novikov, A. V., Tonkikh, A. A., Yurasov, D. V., Antonov, A. A., Baydakova, N. A., Kudryavtsev, K. E., Shaleev, M. V., Lobanov, D. N., Krasilnik, Z. F.

Year:

2014

Language:

english

File:

PDF, 148 KB

english, 2014

7

Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si(0 0 1) structures

D.V. Yurasov, M.V. Shaleev, A.V. Novikov

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 594 KB

english, 2010

8

Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

M.V. Shaleev, A.V. Novikov, A.N. Yablonskiy, Y.N. Drozdov, O.A. Kuznetsov, D.N. Lobanov, Z.F. Krasilnik

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 268 KB

english, 2008

9

Strain-Induced Intrinsic Splitting of the Biexciton Ground State in SiGe/Si Quantum Wells

Nikolaev, S. N., Krivobok, V. S., Davletov, E. T., Bagaev, V. S., Onishchenko, E. E., Novikov, A. V., Shaleev, M. V.

Journal:

Journal of Russian Laser Research

Year:

2018

Language:

english

File:

PDF, 184 KB

english, 2018

10

Photoluminescence of GeSi/Si(0 0 1) self-assembled islands with dome and hut shape

Alexey V Novikov, Mihail V Shaleev, Dmitry N Lobanov, Artem N Yablonsky, Nikolay V Vostokov, Zaharij F Krasilnik

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 349 KB

english, 2004

11

Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si1−xGexlayer

Yu. N. Drozdov, Z. F. Krasil’nik, D. N. Lobanov, A. V. Novikov, M. V. Shaleev, A. N. Yablonskiĭ

Journal:

Year:

2006

Language:

english

File:

PDF, 244 KB

english, 2006

12

Photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Shaleev, M. V., Novikov, A. V., Yablonskiy, A. N., Drozdov, Y. N., Lobanov, D. N., Krasilnik, Z. F., Kuznetsov, O. A.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 287 KB

english, 2006

13

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Baidakova, N. A., Bobrov, A. I., Drozdov, M. N., Novikov, A. V., Pavlov, D. A., Shaleev, M. V., Yunin, P. A., Yurasov, D. V., Krasilnik, Z. F.

Journal:

Year:

2015

Language:

english

File:

PDF, 872 KB

english, 2015

14

Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers

Yu. N. Drozdov, A. V. Novikov, M. V. Shaleev, D. V. Yurasov

Journal:

Year:

2010

Language:

english

File:

PDF, 289 KB

english, 2010

15

Structural and optical properties of metastable SiGe/Si films with a low germanium concentration

Bagaev, V. S., Krivobok, V. S., Lobanov, D. N., Minnullin, A. N., Nikolaev, S. N., Shaleev, A. N., Shevtsov, S. V.

Journal:

Physics of the Solid State

Year:

2014

Language:

english

File:

PDF, 1.87 MB

english, 2014

16

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

N. A. Baidakova,A. V. Novikov,M. V. Shaleev,D. V. Yurasov…

Journal:

Year:

2016

Language:

english

File:

PDF, 333 KB

english, 2016

17

Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells

Krivobok, V. S., Nikolaev, S. N., Novikov, A. V., Shaleev, M. V., Bagaev, V. S., Onishchenko, E. E., Lebedev, V. S., Skorikov, M. L., Utsina, E. V., Kochiev, M. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 423 KB

english, 2016

18

Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

Novikov, A. V., Shaleev, M. V., Yurasov, D. V., Yunin, P. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 694 KB

english, 2016

19

[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA (15-17 May 2006)] 2006 International SiGe Technology and Device Meeting - Intense Photoluminescence from Ge(Si) Self-Assembled Islands Embedded in a Tensile-Strained Si Layer

Novikov, A.V., Shaleev, M.V., Yablonskiy, A.N., Kuznetsov, O.A., Drozdov, Y.N., Lobanov, D.N., Krasilnik, Z.F.

Year:

2006

Language:

english

File:

PDF, 1.89 MB

english, 2006

20

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Yablonskiy, A. N., Novikov, A. V., Stepikhova, M. V., Sergeev, S. M., Baidakova, N. A., Shaleev, M. V., Krasilnik, Z. F.

Journal:

Year:

2020

File:

PDF, 1.47 MB

2020

21

Influence of the germanium deposition rate on the growth and Photoluminescence of Ge(Si)/Si(001) self-assembled islands

N. V. Vostokov, Z. F. Krasil’nik, D. N. Lobanov, A. V. Novikov, M. V. Shaleev, A. N. Yablonsky

Journal:

Physics of the Solid State

Year:

2005

Language:

english

File:

PDF, 155 KB

english, 2005

22

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Baidus, N. V., Aleshkin, V. Ya., Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Pavlov, D. A., Rykov, A. V., Sushkov, A. A., Shaleev, M. V., Yunin, P. A., Yurasov, D. V., Yablons

Journal:

Year:

2017

Language:

english

File:

PDF, 458 KB

english, 2017

23

Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

Baidakova, N. A., Verbus, V. A., Morozova, E. E., Novikov, A. V., Skorohodov, E. V., Shaleev, M. V., Yurasov, D. V., Hombe, A., Kurokawa, Y., Usami, N.

Journal:

Year:

2017

Language:

english

File:

PDF, 488 KB

english, 2017

24

Radiation hardness of GeSi heterostructures with thin Ge layers

J.P. Leitão, N.M. Santos, N.A. Sobolev, M.R. Correia, N.P. Stepina, M.C. Carmo, S. Magalhães, E. Alves, A.V. Novikov, M.V. Shaleev, D.N. Lobanov, Z.F. Krasilnik

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 311 KB

english, 2008

25

Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Yu.N. Drozdov, Z.F. Krasilnik, К.Е. Kudryavtsev, D.N. Lobanov, А.V. Novikov, М.V. Shaleev, D.V. Shengurov, V.B. Shmagin, А.N. Yablonskiy

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 195 KB

english, 2008

26

Si1−xGex/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure

N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, O. A. Kuznetsov, A. V. Novikov, V. A. Perevoshchikov, M. V. Shaleev

Journal:

Physics of the Solid State

Year:

2005

Language:

english

File:

PDF, 123 KB

english, 2005

27

Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers

M. V. Shaleev, A. V. Novikov, A. N. Yablonskiĭ, O. A. Kuznetsov, Yu. N. Drozdov, D. N. Lobanov, Z. F. Krasil’nik

Journal:

Year:

2007

Language:

english

File:

PDF, 294 KB

english, 2007

28

Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

M. V. Shaleev, A. V. Novikov, D. V. Yurasov, J. M. Hartmann…

Journal:

Year:

2013

Language:

english

File:

PDF, 337 KB

english, 2013

29

Intense photoluminescence from Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Novikov, A V, Shaleev, M V, Yablonskiy, A N, Kuznetsov, O A, Drozdov, Yu N, Lobanov, D N, Krasilnik, Z F

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 142 KB

english, 2007

30

Negative photoconductivity of selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas in the middle-infrared range

A. V. Antonov, V. Ya. Aleshkin, V. I. Gavrilenko, Z. F. Krasil’nik, A. V. Novikov, E. A. Uskova, M. V. Shaleev

Journal:

Physics of the Solid State

Year:

2005

Language:

english

File:

PDF, 44 KB

english, 2005

31

Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers

N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, O. A. Kuznetsov, D. N. Lobanov, A. V. Novikov, M. V. Shaleev

Journal:

Year:

2006

Language:

english

File:

PDF, 243 KB

english, 2006

32

Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

Yurasov, D. V., Bobrov, A. I., Daniltsev, V. M., Novikov, A. V., Pavlov, D. A., Skorokhodov, E. V., Shaleev, M. V., Yunin, P. A.

Journal:

Year:

2015

Language:

english

File:

PDF, 525 KB

english, 2015

33

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Baidus, N. V., Aleshkin, V. Ya., Dubinov, A. A., Krasilnik, Z. F., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Reunov, D. G., Shaleev, M. V., Yunin, P. A., Yurasov, D. V.

Journal:

Year:

2018

Language:

english

File:

PDF, 381 KB

english, 2018

34

Photoluminescence of self-assembled GeSi/Si(001) nanoislands of different shapes

N. V. Vostokov, Z. F. Krasil’nik, D. N. Lobanov, A. V. Novikov, M. V. Shaleev, A. N. Yablonskii

Journal:

Physics of the Solid State

Year:

2004

Language:

english

File:

PDF, 145 KB

english, 2004

35

Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

Drozdov, Yu. N., Drozdov, M. N., Yunin, P. A., Yurasov, D. V., Shaleev, M. A., Novikov, A. V.

Journal:

Year:

2015

Language:

english

File:

PDF, 775 KB

english, 2015

36

Study of arc discharges on the P-2000 facility

Glinov, A P, Golovin, A P, Kozlov, P V, Shaleev, K V, Lyubimov, G A

Journal:

Journal of Physics Conference Series

Year:

2019

Language:

english

File:

PDF, 863 KB

english, 2019

37

Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask

Nguyen, V.H., Novikov, A., Shaleev, M., Yurasov, D., Semma, M., Gotoh, K., Kurokawa, Y., Usami, N.

Journal:

Materials Science in Semiconductor Processing

Year:

2020

File:

PDF, 1.20 MB

2020

38

Fabrication of Strain-Relaxed Si1 −xGex/Si(001) Buffer Layers of Low Surface Roughness

N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, O. A. Kuznetsov, A. V. Novikov, V. A. Perevoshchikov, M. V. Shaleev

Journal:

Russian Microelectronics

Year:

2005

Language:

english

File:

PDF, 132 KB

english, 2005

39

Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

Shaleev, M. V., Novikov, A. V., Yurasov, D. V., Hartmann, J. M., Kuznetsov, O. A., Lobanov, D. N., Krasilnik, Z. F.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 790 KB

english, 2012

40

Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

M. V. Shaleev, A. V. Novikov, N. A. Baydakova, A. N. Yablonskiy, O. A. Kuznetsov, D. N. Lobanov, Z. F. Krasilnik

Journal:

Year:

2011

Language:

english

File:

PDF, 176 KB

english, 2011

41

[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA ()] 2006 International SiGe Technology and Device Meeting - Intense Photoluminescence from Ge(Si) Self-Assembled Islands Embedded in a Tensile-Strained Si Layer

Novikov, A.V., Shaleev, M.V., Yablonskiy, A.N., Kuznetsov, O.A., Drozdov, Y.N., Lobanov, D.N., Krasilnik, Z.F.

Year:

2006

Language:

english

File:

PDF, 1.89 MB

english, 2006

42

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Aleshkin, V. Ya., Baidus, N. V., Dubinov, A. A., Fefelov, A. G., Krasilnik, Z. F., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Pavlov, D. A., Samartsev, I. V., Skorokhodov, E. V., Shaleev, M.

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 652 KB

english, 2016

43

Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

Mikhail Shaleev, Alexey Novikov, Nataliya Baydakova, Artem Yablonskiy, Oleg Kuznetsov, Yuriy Drozdov, Dmitriy Lobanov, Zakhary Krasilnik

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 431 KB

english, 2011

44

[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA (15-17 May 2006)] 2006 International SiGe Technology and Device Meeting - Intense Photoluminescence from Ge(Si) Self-Assembled Islands Embedded in a Tensile-Strained Si Layer

Novikov, A.V., Shaleev, M.V., Yablonskiy, A.N., Kuznetsov, O.A., Drozdov, Y.N., Lobanov, D.N., Krasilnik, Z.F.

Year:

2006

Language:

english

File:

PDF, 1.89 MB

english, 2006

45

Visible Emission from a Dense Biexciton Gas in SiGe/Si Quantum Wells under External Anisotropic Strain

Nikolaev, S. N., Krivobok, V. S., Bagaev, V. S., Onishchenko, E. E., Novikov, A. V., Shaleev, M. V.

Journal:

Year:

2018

Language:

english

File:

PDF, 6.92 MB

english, 2018

46

Fine structure of the emission spectrum of a two-dimensional electron–hole liquid in SiGe/Si quantum wells

Nikolaev, S. N., Krivobok, V. S., Bagaev, V. S., Onishchenko, E. E., Novikov, A. V., Shaleev, M. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 502 KB

english, 2016

47

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Shmagin, V. B., Vdovichev, S. N., Morozova, E. E., Novikov, A. V., Shaleev, M. V., Shengurov, D. V., Krasilnik, Z. F.

Journal:

Year:

2016

Language:

english

File:

PDF, 348 KB

english, 2016

48

Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers

M. V. Shaleev, A. V. Novikov, A. N. Yablonskiĭ, O. A. Kuznetsov, Yu. N. Drozdov, Z. F. Krasil’nik

Journal:

Year:

2007

Language:

english

File:

PDF, 255 KB

english, 2007

49

Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots

N. Sustersic, L. Nataraj, C. Weiland, M. Coppinger, M. V. Shaleev, A. V. Novikov, R. Opila, S. G. Cloutier, J. Kolodzey

Year:

2009

Language:

english

File:

PDF, 600 KB

english, 2009

50

Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands

D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, M. V. Shaleev…

Journal:

Year:

2012

Language:

english

File:

PDF, 508 KB

english, 2012

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